| PART |
Description |
Maker |
| HCPL-6250 HCPL-625K HCPL-625X 5962-8876801PA 5962- |
Hermetically Sealed. Low If. Wide Vcc. Logic Gate Optocouplers 密封。如果低。宽的VCC。逻辑门光电耦合
HCPL-523K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-523K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876905K2A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876906KFC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
LED LAMP PANEL CIRCUIT INDICATOR
From old datasheet system
TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd.
TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor]
Marktech Optoelectronics
|
| SB002-15CP |
150V/ 20mA Rectifier
150V, 20mA Rectifier
Small signal(single type)
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| E1008 E512 E530 E522 E531 E533 E513 |
Green, low profile surface mount LED. Lens translucent green. Luminous intensity at 20mA 3.2mcd (min), 8.0mcd (max). Typ.forward voltage at 20mA 2.20V.
High efficiency red, low profile surface mount LED. Lens translucent red. Luminous intensity at 20mA 5.0mcd (min), 12.0mcd (max). Typ.forward voltage at 20mA 2.00V.
Ultra bright red, low profile surface mount LED. Lens translucent red. Luminous intensity at 20mA 40.0mcd (min), 70.0mcd (max). Typ.forward voltage at 20mA 1.85V.
Yellow, low profile surface mount LED. Lens translucent yellow. Luminous intensity at 20mA 3.2mcd (min), 8.0mcd (max). Typ.forward voltage at 20mA 2.10V.
SMT Bright White LEDs
|
GILWAY[Gilway Technical Lamp]
|
| PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F |
Triple 4-3-3-Input NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50
DIODE ZENER SINGLE 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-323 3K/REEL
DIODE ZENER SINGLE 150mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-363 3K/REEL
DIODE ZENER SINGLE 350mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-23 3K/REEL
DIODE ZENER SINGLE 150mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER SINGLE 350mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-23 3K/REEL
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-SOIC 0 to 70
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
DIODE ZENER DUAL ISOLATED 200mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-323 3K/REEL
DIODE ZENER SINGLE 350mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-23 3K/REEL
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER TRIPLE ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER DUAL ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER SINGLE 200mW 6.2Vz 20mA-Izt 0.05 5uA-Ir 4 SOT-323 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存8位CMOS微控制器采用纳瓦技
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-PDIP 0 to 70 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA33 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V.
Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.1V.
Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V.
Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green).
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow).
Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V.
Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
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Gilway Technical Lamp
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
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Samsung Electronic
|
| PWR5900 PWR5901 PWR5902 PWR5903 PWR5904 PWR5905 PW |
.5-1.0 WATT DUAL-IN-LINE REGULATED DC/DC CONVERTER 1-OUTPUT 0.5 W DC-DC REG PWR SUPPLY MODULE
DIODE ZENER SINGLE 500mW 8.7Vz 20mA-Izt 0.05 3uA-Ir 6.5Vr DO35-GLASS 5K/REEL 1-OUTPUT 1 W DC-DC REG PWR SUPPLY MODULE
DIODE ZENER SINGLE 500mW 12Vz 20mA-Izt 0.05 1uA-Ir 9.1Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 12Vz 20mA-Izt 0.05 1uA-Ir 9.1Vr DO35-GLASS 5K/AMMO
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C&D TECHNOLOGIES INC
CANDD[C&D Technologies]
|
| MX25R1035F |
Wide Vcc Range, 1M-BIT
|
Macronix International
|
| LTC1315 LTC1314-15 LTC1314 |
PCMCIA Switching Matrix with Built-In N-Channel VCC Switch Drivers
PCMCIA Switching Matrixwith Built-In N-Channel VCC Switch Drivers
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Linear Technology
|
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